In his doctoral dissertation, M. Sc. Matin Forouzmehr studied the fabrication of the high-k dielectric hafnium oxide by Atomic Layer Deposition (ALD) and its use in low-voltage thin-film transistors (TFTs) and circuits. His work shed light on the physical processes during deposition and the relationship between processes, dielectric properties, and the performance of TFTs, and demonstrated high performance devices. In addition, he developed a novel inverter circuit that operates with a temperature sensor material that changes its conductivity drastically upon temperature change. and integrated this circuit into a temperature sensor device with an irreversible optical indicator and power provided by a supercapacitor. This work demonstrates the potential for electronic sensors that do not need a silicon chip to work.
The doctoral dissertation of M.Sc. Matin Forouzmehr in the field of electrical engineering titled Thin-Film Transistors and Circuits from Solution Processing and ALD and Their Integration into Sensor Devices will be examined at the Faculty of Information Technology and Communication Sciences on Friday, 13 February 2026.
The opponent will be Prof. Thomas Anthopoulos from the University of Manchester, UK. The custos will be Professor Emeritus Donald Lupo of the Faculty of Information Technology and Communication Sciences.