TTKK Opinto-opas
83703 RF-ASIC Design, 5 ov
Professor NIKOLAY TCHAMOV
Lectures 56 h. Exercises 56 h.
| Viikottainen Opetus / Periodi |
S1 | S2 | K1 | K2 | Kesä |
|---|
| Luennot (h) | - | - |
4+ | 4 | - |
|---|
| Harjoitukset (h) | - | - |
4+ | 4 | - |
|---|
Tavoitteet
Intermediate to advanced level knowledge for RF-ASIC development.
Sisältö
Active and passive components of high-frequency and high-speed integrated
circuits: Electrical and structural
specifics of the intergrated bipolar and MOS transistors,
inductors, capacitors, varactors, resistors, contact pads and lines.
Physical structures and electrical models. Frequency,
transient, temperature, noise and tolerance analysis and
design. Physical design. Parasitics estimates. RF-measurements on
microscope-probe-station, GHz-range
oscilloscope, spectrum analyser and network analyser. GHz-
range design examples: Low-noise amplifier, LC-VCO,
resonance-ring VCO, etc. Technologies in use: BiCMOS, Bipolar,
CMOS, and SiGe. Software in use: PSpice, CADENCE,
ADS.
Tutkintovaatimukset
Completion of the exercise tasks, which include also designing
and measuring an RF-ASIC, passing the written examination.
Vaadittavat esitiedot
83702 Communication Circuits & Modules.
Linkkejä
Kotisivu/Home page.